Advanced Materials Patents
Couche mince de nitrure de carbone graphitique
Gerardo Larramona, Christophe Choné
Filing Date
31-03-2020
Matériau à base Matériau à base de Ta2Ni3S8de structure cristalline tétragonale du groupe d’espace 87, procédé et applications, notamment comme composé thermoélectrique
Radoslaw Chmielowski, Daniel Péré, Alin Jacob, Bruno Delatouche
Filing Date
31-03-2020
Composé Oxide Métallique et Procédé de Fabrication
Stéphane Bourdais, Alain Jacob, Bruno Delatouche, Jean-Claude Grenier, Elise Bonnet, Jean-Marc Bassat
Filing Date
02-10-2020
Thermoelectric compound based on N-doped Antimonide Composé thermoélectrique à base d’antimoniure dopé de type N
Daniel Péré, Bruno Delatouche, Radoslaw Chmielowski
Filing Date
04-02-2019
Process for preparing titanium / amine sulfide thin films and thin films obtained
Stéphane Jacob, Bruno Delatouche, Radoslaw Chmielowski
Filing Date
26-10-2018
Thermolectric material made from a doped or undoped cobalt antimony sulfide alloy with selenium, and methods for obtaining same
Radoslaw Chmielowski, Daniel Péré, Stéphane Jacob, Gilles Dennler, Sandip Bhattacharya, Georg Madsen, and Kenzo Moriya
Filing Date
11-05-2016
Thermoelectric material based on n-type doped cobalt antimony sulphide
Radoslaw Chmielowski, Daniel Péré, Stéphane Jacob, Gilles Dennler, Sandip Bhattacharya, and Georg Madsen
Filing Date
11-05-2016
Espaceurs moléculaires à base de spiroxazines chromogènes non-symétriques
Adela Nano, Raymond Ziessel, Stéphane Jacob, and Gilles Dennler
Filing Date
06-08-2014
Method for preparing a thin absorber layer made from sulfide(s) and selenide(s) of copper, zinc and tin, annealed thin layer and photovoltaic device obtained
Alain Jacob, Christophe Choné, Gerardo Larramona, Bruno Delatouche, Stéphane Bourdais, and Gilles Dennler
Filing Date
05-06-2014
Thermoelectric material and method of fabrication
Stéphane Jacob, Radoslaw Chmielowski, Gilles Dennler, Opahle Ingo, Chandan Bera, and Georg K. H. Madsen
Filing Date
11-04-2014
Method for preparing a thin absorber layer made from sulfide(s) of copper, zinc and tin, annealed thin layer and photovoltaic device obtained
Alain Jacob, Gerardo Larramona, Stéphane Bourdais, Christophe Choné, and Yan Cuccaro
Filing Date
29-01-2013
Large-grain crystallised metal chalcogenide film, colloidal solution of amorphous particles, and preparation methods
Stéphane Bourdais, Christophe Choné, and Yan Cuccaro
Filing Date
26-07-2012
Solid photovoltaic device having absorber layer based on tin antimony sulfide
Gerardo Larramona
Filing Date
01-04-2011
Inorganic Photovoltaic Cell
Nezu Shinji, Camille Moisan, Christophe Choné, Alain Jacob, Gerardo Larramona, Bruno Delatouche, and Daniel Péré
Filing Date
30-11-2009
Solid-state photovoltaic devices comprising an absorber layer made of a sulfide compound of antimony and silver, or of a sulfide compound of antimony and copper
Gerardo Larramona, Christophe Choné, and Alain Jacob
Filing Date
21-06-2007
Solid-state photovoltaic devices comprising an absorber layer made of tin sulfide, or bismuth sulfide
Gerardo Larramona, Alain Jacob, Claude Lévy-Clément, Cécile Georges, and Jeffrey RS. Brownson
Filing Date
11-04-2006
Solid-state photovoltaic device comprising an absorber layer made of antimony sulfide
Christophe Choné, and Gerardo Larramona
Filing Date
31-03-2006
Solid-state photovoltaic device with interpenetrated configuration comprising new absorbers or semiconductor materials
Christophe Choné, Rocío Bayón, Alain Jacob, Gerardo Larramona, and Daisuke Sakakura
Filing Date
04-02-2005
Solid-state photovoltaic device comprising a monolithic layer of a semiconductor material comprising pores with the shape of chanels
Gerardo Larramona, Christophe Choné, and Daisuke Sakakura
Filing Date
04-02-2005
Metal complex photosensitizers and photo-electrochemical cell
Carlo Alberto Bignozzi, Cristiano Contado, Matteo Biancardo, Silvano Altobello, and Gerardo Larramona
Filing Date
28-11-2002
A photo-electrochemical cell of improved photon conversion efficiency
Christophe Choné, Gerardo Larramona, and Daisuke Sakakura
Filing Date
29-06-2001
Metal oxide material for semiconductor sensor, and carbon monoxide sensor using the material
Gerardo Larramona, Kunio Ishihara, and Pascal Ancey
Filing Date
29-03-1999